(Hong Kong)
Product Summary
The FQP4N60C is an N-Channel enhancement mode power field effect transistor is produced using fairchild proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQP4N60C well suited for high efficiency switch mode power supply.
Parametrics
FQP4N60C absolute maximum ratings: (1)Drain-Source Voltage: 600 V; (2)Drain current continuous (TC = 25°C): 4.4 A; Continuous (TC = 100°C): 2.8 A; (3)Drain current - pulsed (Note 1): 17.6 A; (4)Gate-source voltage: ±30 V; (5)Single pulsed avalanche energy (Note 2): 260 mJ; (6)Avalanche current (Note 1): 4.4 A; (7)Repetitive avalanche energy (Note 1): 10.6 mJ; (8)Peak diode recovery dv/dt (Note 3): 4.5 V/ns; (9)Power dissipation (TC = 25°C): 106 W; Derate above 25°C: 0.85 W/°C; (10)Operating and storage temperature range: -55 to +150 °C; (11)Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds: 300 °C.
Features
FQP4N60C features: (1)4.4A, 600V, RDS(on)= 2.2Ω @VGS = 10 V; (2)Low gate charge ( typical 15 nC); (3)Low Crss ( typical 8.0 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.
Diagrams
