Product Summary

The FQP2N60C is an N-Channel MOSFET. The FQP2N60C is produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQP2N60C is well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Parametrics

FQP2N60C absolute maximum ratings: (1)Drain-Source Voltage: 600 V; (2)Drain Current - Continuous (TC = 25℃): 2.0 A; (3)Drain Current - Pulsed: 8 A; (4)Gate-Source Voltage: ±30 V; (5)Single Pulsed Avalanche Energy: 120 mJ; (6)Avalanche Current: 2.0 A; (7)Repetitive Avalanche Energy: 5.4 mJ; (8)Operating and Storage Temperature Range: -55 to +150 ℃.

Features

FQP2N60C features: (1)2.0A, 600V, RDS(on) = 4.7Ω @VGS = 10 V; (2)Low gate charge ( typical 8.5 nC); (3)Low Crss ( typical 4.3 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.

Diagrams

FQP2N60C dimension

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FQP2N60C
FQP2N60C
Fairchild Semiconductor
MOSFET 600V N-Channel Advance Q-FET
Data Sheet
0-1: $0.51
1-25: $0.45
25-100: $0.41
100-250: $0.36
FQP2N60C_Q
FQP2N60C_Q
Fairchild Semiconductor
MOSFET 600V N-Channel Advance Q-FET
Data Sheet
Negotiable