(Hong Kong)
Product Summary
The BFG591 is an NPN 7 GHz wideband transistor. NPN silicon planar epitaxial transistor in a plastic, 4-pin SOT223 package. The applications of the BFG591 include Intended for applications in the GHz range such as MATV or CATV amplifiers and RF communications subscriber equipment.
Parametrics
BFG591 absolute maximum ratings: (1) collector-base voltage: 20 V; (2) collector-emitter voltage: 15 V; (3) collector current (DC): 200 mA; (4) total power dissipation: 2 W; (5) feedback capacitance: 0.7 pF; (6) transition frequency: 7 GHz.
Features
BFG591 features: (1)High power gain; (2)Low noise figure; (3)High transition frequency; (4)Gold metallization ensures excellent reliability.
Diagrams
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 BFG591 |
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Negotiable |
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BFG591,115 |
NXP Semiconductors |
Transistors RF Bipolar Small Signal NPN 15V 7GHZ |
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