(Hong Kong)
Product Summary
The BF1100WR,115 is an enhancement type field-effect transistor in a plastic microminiature SOT343R package. The BF1100WR,115 consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. Application is VHF and UHF applications such as television tuners and professional communications equipment.
Parametrics
BF1100WR,115 absolute maximum ratings: (1)Drain-source voltage: 14 V; (2)Drain current: 30 mA; (3)Gate 1 current: ±10 mA; (4)Gate 2 current: ±10 mA; (5)Total power dissipation see Fig.2; up to Tamb = 50 °C; note 1: 280 mW; (6)Storage temperature: -65 to +150 °C; (7)Operating junction temperature: +150 °C.
Features
BF1100WR,115 features: (1)Specially designed for use at 9 to 12 V supply voltage; (2)Short channel transistor with high forward transfer admittance to input capacitance ratio; (3)Low noise gain controlled amplifier up to 1 GHz; (4)Superior cross-modulation performance during AGC.
Diagrams
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 BF1100WR,115 |
NXP Semiconductors |
Transistors RF MOSFET Small Signal TAPE-7 MOS-RFSS |
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| Image | Part No | Mfg | Description | |
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BF1100,215 |
NXP Semiconductors |
Transistors RF MOSFET Small Signal TAPE7 MOS-RFSS |
Data Sheet |
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BF1100R,215 |
NXP Semiconductors |
Transistors RF MOSFET Small Signal TAPE7 MOS-RFSS |
Data Sheet |
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BF1100WR,115 |
NXP Semiconductors |
Transistors RF MOSFET Small Signal TAPE-7 MOS-RFSS |
Data Sheet |
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BF1101R,215 |
NXP Semiconductors |
Transistors RF MOSFET Small Signal Dual N-Channel 7V 30mA 200mW |
Data Sheet |
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BF1101,215 |
NXP Semiconductors |
Transistors RF MOSFET Small Signal Dual N-Channel 7V 30mA 200mW |
Data Sheet |
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BF1100R,235 |
NXP Semiconductors |
Transistors RF MOSFET Small Signal Dual N-Channel 14V 30mA 200mW |
Data Sheet |
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