(Hong Kong)
Product Summary
The AO9926 is a dual n-channel enhancement mode field effect transistor. The AO9926 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The AO9926 offers operation over a wide gate drive range from 1.8V to 8V. The two devices may be used individually, in parallel or to form a bidirectional blocking switch.
Parametrics
AO9926 absolute maximum ratings: (1)Drain-Source Voltage: 20 V; (2)Gate-Source Voltage: ±8 V; (3)Pulsed Drain Current B: 20A; (4)Power Dissipation TA=25°C PD: 2W; (5)Junction and Storage Temperature Range: -55 to 150 °C.
Features
AO9926 features: (1)VDS (V)= 20V; (2)ID = 5A; (3)RDS(ON)< 50mΩ (VGS = 4.5V); (4)RDS(ON)< 65mΩ (VGS = 2.5V); (5)RDS(ON)< 90mΩ (VGS = 1.8V).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 AO9926C |
|
MOSFET 2N-CH 20V 7.6A 8SOIC |
Data Sheet |
|
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 |
AO9926E |
Other |
|
Data Sheet |
Negotiable |
|
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|
AO9926B |
|
MOSFET DUAL N-CH 20V 7.6A 8-SOIC |
Data Sheet |
Negotiable |
|
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|
AO9926A |
Other |
|
Data Sheet |
Negotiable |
|
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|
AO9926 |
Other |
|
Data Sheet |
Negotiable |
|
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