(Hong Kong)
Product Summary
The AO8403 is a P-Channel Enhancement Mode Field Effect Transistor. The AO8403 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO8403 is Pb-free (meets ROHS & Sony 259 specifications).
Parametrics
AO8403 absolute maximum ratings: (1)drain-source voltage: -20V; (2)gate-source voltage: ±8V; (3)continuous drain current: -4 or -3.5A; (4)pulsed drain current: -30A; (5)power dissipation: 1.5 or 1W; (6)junction and storage temperature range: -55 to 150°C.
Features
AO8403 features: (1)VDS(V)= -20V; (2)ID= -4 A (VGS = -4.5V); (3)RDS(ON)< 42mΩ(VGS= -4.5V); (4)RDS(ON)< 52mΩ(VGS= -2.5V); (5)RDS(ON)< 70mΩ(VGS= -1.8V); (6)ESD Rating: 3000V HBM.
Diagrams
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AO8403 |
Other |
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Data Sheet |
Negotiable |
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