Product Summary

The AO4708 is an N-channel enhancement mode field effect transistor. The AO4708 uses advanced trench technology with a monolithically integrated schottky diode to provide excellent RDS(ON),and low gate charge. The AO4708 is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Standard Product AO4708 is Pb-free.

Parametrics

AO4708 absolute maximum ratings: (1)Drain-source voltage: 30 V; (2)Gate-source voltage: ±12 V; (3)Continuous drain current TA=25°C: 15 A; TA=70°C: 12 A; (4)Pulsed drain current: 80 A; (5)Power dissipation TA=25°C: 3.1 W; TA=70°C: 2.0 W; (6)Junction and storage temperature range: -55 to 150 °C; (7)Avalanche current: 25 A; (8)Repetitive avalanche energy L=0.3mH: 94 mJ.

Features

AO4708 features: (1)VDS (V)= 30V; (2)ID = 15A (VGS = 10V); (3)RDS(ON)< 8.7mΩ (VGS = 10V); (4)RDS(ON)< 10.5mΩ (VGS = 4.5V).

Diagrams

AO4708 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
AO4708
AO4708

MOSFET N-CH 30V 15A 8-SOIC
Data Sheet
Negotiable 
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(USD)		 Quantity
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0-1: $0.47
1-25: $0.37
25-100: $0.32
100-250: $0.28
250-500: $0.24
500-1000: $0.19
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