(Hong Kong)
Product Summary
The AO4708 is an N-channel enhancement mode field effect transistor. The AO4708 uses advanced trench technology with a monolithically integrated schottky diode to provide excellent RDS(ON),and low gate charge. The AO4708 is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Standard Product AO4708 is Pb-free.
Parametrics
AO4708 absolute maximum ratings: (1)Drain-source voltage: 30 V; (2)Gate-source voltage: ±12 V; (3)Continuous drain current TA=25°C: 15 A; TA=70°C: 12 A; (4)Pulsed drain current: 80 A; (5)Power dissipation TA=25°C: 3.1 W; TA=70°C: 2.0 W; (6)Junction and storage temperature range: -55 to 150 °C; (7)Avalanche current: 25 A; (8)Repetitive avalanche energy L=0.3mH: 94 mJ.
Features
AO4708 features: (1)VDS (V)= 30V; (2)ID = 15A (VGS = 10V); (3)RDS(ON)< 8.7mΩ (VGS = 10V); (4)RDS(ON)< 10.5mΩ (VGS = 4.5V).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 AO4708 |
|
MOSFET N-CH 30V 15A 8-SOIC |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
|
AO4701 |
|
MOSFET P-CH -30V -5A 8-SOIC |
Data Sheet |
Negotiable |
|
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 |
AO4702 |
Other |
|
Data Sheet |
Negotiable |
|
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|
AO4704 |
Other |
|
Data Sheet |
Negotiable |
|
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|
AO4706 |
|
MOSFET N-CH 30V 16.5A 8-SOIC |
Data Sheet |
Negotiable |
|
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|
AO4708 |
|
MOSFET N-CH 30V 15A 8-SOIC |
Data Sheet |
Negotiable |
|
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|
AO4710 |
|
MOSFET N-CH 30V 12.7A 8-SOIC |
Data Sheet |
Negotiable |
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