(Hong Kong)
Product Summary
The AO4600 is a complementary enhancement mode field effect transistor. The AO4600 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard product AO4600 is Pb-free (meets ROHS & Sony 259 specifications).
Parametrics
AO4600 absolute maximum ratings: (1)Gate-source voltage: ±12 V; (2)Drain-source voltage: 30 V, -30 V; (3)Continuous drain current A, TA=25°C: 6.9 A, -5 A; TA=70°C: 5.8 A, -4.2 A; (4)Pulsed drain Current B: 40 A, -30 A; (5)Power dissipation A, TA=25°C: 2 W; TA=70°C: 1.44 W; (6)Junction and storage temperature range: -55 to 150 °C.
Features
AO4600 features: (1)N-channel: VDS (V)= 30V, ID = 6.9A (VGS = 10V), RDS(ON)< 27mΩ (VGS =- 10V), < 32mΩ(VGS =- 4.5V), < 50mΩ (VGS = -2.5V); (2)P-channel: VDS (V)= -30V, ID = -5A (VGS = -10V), RDS(ON)< 49mΩ (VGS =- 10V), < 64mΩ (VGS =- 4.5V), < 120mΩ (VGS = -2.5V).
Diagrams
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 AO4600 |
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Data Sheet |
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| Image | Part No | Mfg | Description | |
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AO4600 |
Other |
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Negotiable |
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AO4601 |
Other |
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AO4604 |
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AO4606 |
Other |
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Negotiable |
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AO4607 |
Other |
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Data Sheet |
Negotiable |
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AO4609 |
Other |
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Negotiable |
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