(Hong Kong)
Product Summary
The BFU725F/N1,115 is an NPN wideband silicon germanium RF transistor. Applications are (1)2nd LNA stage and mixer stage iDBS LNB; (2)Satellite radio; (3)Low noise amplifiers for microwave communications systems; (4)WLAN and CDMA applications; (5)Analog/digital cordless applications; (6)Ka band oscillators.
Parametrics
BFU725F/N1,115 absolute maximum ratings: (1)Collector-base voltage open emitter: 10 V; (2)Collector-emitter voltage open base: 2.8 V; (3)Emitter-base voltage open collector: 0.55 V; (4)Collector current: 40 mA; (5)Total power dissipation Tsp ≤ 90 °C [1]: 136 mW; (6)Storage temperature: -65 +150 °C; (7)Junction temperature: 150 °C.
Features
BFU725F/N1,115 features: (1)Low noise high gaimicrowave transistor; (2)Noise figure (NF)= 0.7 dB at 5.8 GHz; (3)High maximum stable gai27 dB at 1.8 GHz; (4)110 GHz fT silicogermanium technology.
Diagrams
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 BFU725F/N1,115 |
NXP Semiconductors |
Transistors RF Bipolar Small Signal 2.8V 0.04A 4-Pin Trans GP BJT NPN |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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BFU725F/N1,115 |
NXP Semiconductors |
Transistors RF Bipolar Small Signal 2.8V 0.04A 4-Pin Trans GP BJT NPN |
Data Sheet |
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BFU790F,115 |
NXP Semiconductors |
Transistors RF Silicon Germanium NPN WIDEBAND SILICON GERMANIUM RF TRANS |
Data Sheet |
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BFU760F,115 |
NXP Semiconductors |
Transistors RF Silicon Germanium NPN WIDEBAND SILICON GERMANIUM RF TRANS |
Data Sheet |
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BFU730F,115 |
NXP Semiconductors |
Transistors RF Silicon Germanium NPN WIDEBAND SILICON GERMANIUM RF TRANS |
Data Sheet |
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BFU725F,115 |
NXP Semiconductors |
Transistors RF Bipolar Small Signal RF NPN Transistor |
Data Sheet |
Negotiable |
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BFU725F |
Other |
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Data Sheet |
Negotiable |
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