Product Summary

The AO4446 is an N-channel enhancement mode field effect transistor. The AO4446 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. The AO4446 is ideally suited for use in PWM applications. Standard Product AO4446 is Pb-free.

Parametrics

AO4446 absolute maximum ratings: (1)Drain-source voltage: 30 V; (2)Gate-source voltage: ±20 V; (3)Continuous drain current TA=25°C: 15 A; TA=70°C: 12 A; (4)Pulsed drain current: 40 A; (5)Power dissipation TA=25°C: 3 W; TA=70°C: 2.1 W; (6)Junction and storage temperature range: -55 to 150 °C; (7)Avalanche current: 20 A; (8)Repetitive avalanche energy L=0.1mH: 50 mJ.

Features

AO4446 features: (1)VDS (V)= 30V; (2)ID = 15A (VGS = 10V); (3)RDS(ON)< 8.5mΩ (VGS = 10V); (4)RDS(ON)< 14.5mΩ (VGS = 4.5V).

Diagrams

AO4446 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
AO4446
AO4446
Other

Data Sheet
Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
AO4401
AO4401
Other

Data Sheet
Negotiable 
AO4402
AO4402

MOSFET N-CH 20V 20A 8SOIC
Data Sheet
0-3000: $0.23
AO4403
AO4403

MOSFET P-CH -30V -6.1A 8-SOIC
Data Sheet
0-1: $0.39
1-25: $0.27
25-100: $0.23
100-250: $0.20
250-500: $0.17
500-1000: $0.13
AO4404
AO4404
Other

Data Sheet
Negotiable 
AO4404B
AO4404B

MOSFET N-CH 30V 8.5A 8-SOIC
Data Sheet
0-1: $0.32
1-25: $0.23
25-100: $0.20
100-250: $0.17
250-500: $0.15
500-1000: $0.11
AO4405
AO4405
Other

Data Sheet
Negotiable