Product Summary

The AO4433 is a P-channel enhancement mode field effect transistor. The AO4433 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. The AO4433 is suitable for use as a load switch or in PWM applications. The device is ESD protected. Standard product AO4433 is Pb-free.

Parametrics

AO4433 absolute maximum ratings: (1)Drain-source voltage: -30 V; (2)Gate-source voltage: ±25 V; (3)Continuous drain current TA=25°C: -11 A; TA=70°C: -9.7 A; (4)Pulsed drain current: -50 A; (5)Power dissipation TA=25°C: 3 W; TA=70°C: 2.1 W; (6)Junction and storage temperature range: -55 to 150 °C.

Features

AO4433 features: (1)VDS (V)= -30V; (2)ID = -11A (VGS = -20V); (3)RDS(ON)< 514mΩ (VGS = -20V); (4)RDS(ON)< 18mΩ (VGS = -10V); (5)ESD rating: 1.5KV HBM.

Diagrams

AO4433 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
AO4433
AO4433

MOSFET P-CH -30V -11A 8-SOIC
Data Sheet
Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
AO4401
AO4401
Other

Data Sheet
Negotiable 
AO4402
AO4402

MOSFET N-CH 20V 20A 8SOIC
Data Sheet
0-3000: $0.23
AO4403
AO4403

MOSFET P-CH -30V -6.1A 8-SOIC
Data Sheet
0-1: $0.39
1-25: $0.27
25-100: $0.23
100-250: $0.20
250-500: $0.17
500-1000: $0.13
AO4404
AO4404
Other

Data Sheet
Negotiable 
AO4404B
AO4404B

MOSFET N-CH 30V 8.5A 8-SOIC
Data Sheet
0-1: $0.32
1-25: $0.23
25-100: $0.20
100-250: $0.17
250-500: $0.15
500-1000: $0.11
AO4405
AO4405
Other

Data Sheet
Negotiable