BFU760F,115

BFU760F,115, NPN silicon germanium microwave transistor, SOT, 10V, 70mA, NXP Semiconductors

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Price:: US $0.30~0.50 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 1000 :	0.50 / Piece
1001 ~ 10000 :	0.40 / Piece
10001 ~ 100000 :	0.30 / Piece

PartNumber:: BFU760F,115

Brand:: NXP Semiconductors - nxp | D/C: 13+

Availability:: Supply Ability: 100000/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-06-17

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Part Number:BFU760F,115
US $0.30 - 0.50
Quantity:

piece

Product Summary

The BFU760F,115 is an NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. The applications of the BFU760F,115 include High linearity applications, Medium output power applications, Wi-Fi / WLAN / WiMAX, GPS, ZigBee, SDARS first stage LNA, LTE, cellular, UMTS.

Parametrics

BFU760F,115 absolute maximum ratings: (1)VCBO collector-base voltage open emitter: 10 V; (2)VCEO collector-emitter voltage open base: 2.8 V; (3)VEBO emitter-base voltage open collector: 1.0 V; (4)IC collector current: 70 mA; (5)Ptot total power dissipation: 220 mW; (6)Tstg storage temperature: -65 to +150℃; (7)Tj junction temperature: 150℃.

Features

BFU760F,115 features: (1)Low noise high linearity RF transistor; (2)High maximum output third-order intercept point 32 dBm at 1.8 GHz; (3)110 GHz fT silicon germanium technology.