(Hong Kong)
Product Summary
The BFU760F,115 is an NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. The applications of the BFU760F,115 include High linearity applications, Medium output power applications, Wi-Fi / WLAN / WiMAX, GPS, ZigBee, SDARS first stage LNA, LTE, cellular, UMTS.
Parametrics
BFU760F,115 absolute maximum ratings: (1)VCBO collector-base voltage open emitter: 10 V; (2)VCEO collector-emitter voltage open base: 2.8 V; (3)VEBO emitter-base voltage open collector: 1.0 V; (4)IC collector current: 70 mA; (5)Ptot total power dissipation: 220 mW; (6)Tstg storage temperature: -65 to +150℃; (7)Tj junction temperature: 150℃.
Features
BFU760F,115 features: (1)Low noise high linearity RF transistor; (2)High maximum output third-order intercept point 32 dBm at 1.8 GHz; (3)110 GHz fT silicon germanium technology.
Diagrams
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 BFU760F,115 |
NXP Semiconductors |
Transistors RF Silicon Germanium NPN WIDEBAND SILICON GERMANIUM RF TRANS |
Data Sheet |
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Data Sheet |
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