Product Summary

The AO4422L is an N-channel enhancement mode field effect transistor. The AO4422L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The AO4422L is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance.

Parametrics

AO4422L absolute maximum ratings: (1)Drain-source voltage: 30 V; (2)Gate-source voltage: ±20 V; (3)Continuous drain current TA=25°C: 11 A; TA=70°C: 9.3 A; (4)Pulsed drain current: 50 A; (5)Power dissipation TA=25°C: 3 W; TA=70°C: 2.1 W; (6)Junction and storage temperature range: -55 to 150 °C.

Features

AO4422L features: (1)VDS (V)= 30V; (2)ID = 11A (VGS = 10V); (3)RDS(ON)< 15mΩ (VGS = 10V); (4)RDS(ON)< 24mΩ (VGS = 4.5V).

Diagrams

AO4422L pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
AO4422L
AO4422L
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Data Sheet
Negotiable 
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