Product Summary
The AO4403 is a P-channel enhancement mode field effect transistor. The AO4403 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. The AO4403 is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance.
Parametrics
AO4403 absolute maximum ratings: (1)Drain-source voltage: -30 V; (2)Gate-source voltage: ±12 V; (3)Continuous drain current TA=25°C: -6.1 A; TA=70°C: -5.1 A; (4)Pulsed drain current: -60 A; (5)Power dissipation TA=25°C: 3 W; TA=70°C: 2.1 W; (6)Junction and storage temperature range: -55 to 150 °C.
Features
AO4403 features: (1)VDS (V)= -30V; (2)ID = -6.1 A; (3)RDS(ON)< 46mΩ (VGS = -10V); (4)RDS(ON)< 61mΩ (VGS = -4.5V); (5)RDS(ON)< 117mΩ (VGS = -2.5V).
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||||
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AO4403 |
MOSFET P-CH -30V -6.1A 8-SOIC |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||||
AO4401 |
Other |
Data Sheet |
Negotiable |
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AO4402 |
MOSFET N-CH 20V 20A 8SOIC |
Data Sheet |
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AO4403 |
MOSFET P-CH -30V -6.1A 8-SOIC |
Data Sheet |
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AO4404 |
Other |
Data Sheet |
Negotiable |
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AO4404B |
MOSFET N-CH 30V 8.5A 8-SOIC |
Data Sheet |
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AO4405 |
Other |
Data Sheet |
Negotiable |
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