Product Summary
The AO3419 is a P-channel enhancement mode field effect transistor. The AO3419 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. The AO3419 is suitable for use as a load switch or in PWM applications. It is ESD protected.
Parametrics
AO3419 absolute maximum ratings: (1)Drain-source voltage: -20 V; (2)Gate-source voltage: ±12 V; (3)Continuous drain current TA=25°C: -3.5 A; TA=70°C: -2.8 A; (4)Pulsed drain current: 15 A; (5)Power dissipation TA=25°C: 1.4 W; TA=70°C: 0.9 W; (6)Junction and storage temperature range: -55 to 150 °C.
Features
AO3419 features: (1)VDS (V)= -20V; (2)ID = -3.5 A; (3)RDS(ON)< 75mΩ (VGS = -10V); (4)RDS(ON)< 95mΩ (VGS = -4.5V); (5)RDS(ON)< 145mΩ (VGS = -2.5V); (6)ESD rating: 2000V HBM.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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AO3419L |
Other |
Data Sheet |
Negotiable |
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AO3419 |
MOSFET P-CH -20V -3.5A SOT23 |
Data Sheet |
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