Product Summary

The AO3419 is a P-channel enhancement mode field effect transistor. The AO3419 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. The AO3419 is suitable for use as a load switch or in PWM applications. It is ESD protected.

Parametrics

AO3419 absolute maximum ratings: (1)Drain-source voltage: -20 V; (2)Gate-source voltage: ±12 V; (3)Continuous drain current TA=25°C: -3.5 A; TA=70°C: -2.8 A; (4)Pulsed drain current: 15 A; (5)Power dissipation TA=25°C: 1.4 W; TA=70°C: 0.9 W; (6)Junction and storage temperature range: -55 to 150 °C.

Features

AO3419 features: (1)VDS (V)= -20V; (2)ID = -3.5 A; (3)RDS(ON)< 75mΩ (VGS = -10V); (4)RDS(ON)< 95mΩ (VGS = -4.5V); (5)RDS(ON)< 145mΩ (VGS = -2.5V); (6)ESD rating: 2000V HBM.

Diagrams

AO3419 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
AO3419
AO3419


MOSFET P-CH -20V -3.5A SOT23

Data Sheet

0-1: $0.32
1-25: $0.19
25-100: $0.15
100-250: $0.11
250-500: $0.09
500-1000: $0.07
AO3419L
AO3419L

Other


Data Sheet

Negotiable