Product Summary
The AO3413 is a P-Channel Enhancement Mode Field Effect Transistor. It uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. The AO3413 is suitable for use as a load switch or in PWM applications.
Parametrics
AO3413 absolute maximum ratings: (1)Drain-Source Voltage: -20 V; (2)Gate-Source Voltage: ±8 V; (3)Continuous Drain Current: -3 A at TA=25 ℃, -2.4 A at TA=70 ℃; (4)Pulsed Drain Current: -15 A; (5)Power Dissipation: 1.4 W at TA=25 ℃, 0.9 W at TA=70 ℃; (6)Junction and Storage Temperature Range: -55 to 150 ℃.
Features
AO3413 features: (1)VDS (V) = -20V; (2)ID = -3 A; (3)RDS(ON) < 97mΩ (VGS = -4.5V); (4)RDS(ON) < 130mΩ (VGS = -2.5V); (5)RDS(ON) < 190mΩ (VGS = -1.8V).
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||||
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AO3413 |
MOSFET P-CH -20V -3.0A SOT23 |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||||
AO3400 |
Other |
Data Sheet |
Negotiable |
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AO3400A |
MOSFET N-CH 30V 5.7A SOT23 |
Data Sheet |
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AO3401 |
Other |
Data Sheet |
Negotiable |
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AO3401A |
MOSFET P-CH -30V -4.3A SOT23 |
Data Sheet |
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AO3402 |
MOSFET N-CH 30V 4.0A SOT23 |
Data Sheet |
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AO3402L |
Other |
Data Sheet |
Negotiable |
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