(Hong Kong)
Product Summary
The AO3407 transistor uses advanced trench technology to provide excellent RDS(ON) with low gate charge. The AO3407 is suitable for use as a load switch or in PWM applications. The AO3407 an electrically identical.
Parametrics
AO3407 absolute maximum ratings: (1)Gate-Body leakage current: ±100 nA; (2)Gate Threshold Voltage: -1.5 to -2.5 V; (3)Maximum Body-Diode Continuous Current: -2 A; (4)On state drain current: -30 A.
Features
AO3407 features: (1)VDS (V)= -30V; (2)ID = -4.3A (VGS = -10V); (3)RDS(ON)< 48mΩ (VGS = -10V); (4)RDS(ON)< 78mΩ (VGS = -4.5V).
Diagrams
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 AO3407 |
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Data Sheet |
Negotiable |
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AO3407A |
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MOSFET P-CH -30V -4.3A SOT23 |
Data Sheet |
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