SKW25N120

Fast IGBT, 1200V, 46A, 313W, 10 us, Infineon Technologies AG, SKW25N120

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Price:: US $0.30~0.50 / piece [Get Latest Price]

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Qty (lots)	Price/lot
1 ~ 1000 :	0.50 / Piece
1001 ~ 10000 :	0.40 / Piece
10001 ~ 100000 :	0.30 / Piece

PartNumber:: SKW25N120

Brand:: Infineon Technologies AG - Infineon | D/C: 13+

Availability:: Supply Ability: 10000/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-07-31

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Part Number:SKW25N120
US $0.30 - 0.50
Quantity:

piece

Product Summary

The SKW25N120 is a Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode.

Parametrics

SKW25N120 absolute maximum ratings: (1)Collector-emitter voltage, VCE: 1200V; (2)DC collector current, IC: 46A at TC =25°C; 25A at TC =100°C; (3)Pulsed collector current, tp limitedby Tjmax, ICpuls: 84A; (4)Turn off safe operating area, VCE ≤ 1200V, Tj≤ 150°C: 84A; (5)Diode forward current, IF: 42A at TC =25°C; 25A at TC =100°C; (6)Diode pulsed current, tp limitedby Tjmax IFpuls: 80A; (7)Gate-emitter voltage VGE: ±20 V; (8)Short circuit with standtime, VGE =15V,100V≤VCC ≤1200V, Tj≤150°C, tSC: 10 us; (9)Power dissipation, TC =25°C, Ptot: 313W; (10)Operating junction and storage temperature Tj, Tstg -55 to +150 °C; (11)Soldering temperature, wave soldering,1.6mm(0.063in. from case for 10s, Ts :260°C.

Features

SKW25N120 features: (1)40lower Eoff compared to previous generation; (2)Short circuit withstand time–10us; (3)Designed for: Motor controls; Inverter; SMPS; (4)NPT-Technology offers: very tight parameter distribution; hig hruggedness, temperature stable behaviour; parallel switching capability; (5)Pb-free lead plating; RoHS compliant; (6)Qualified according to JEDEC1 for target applications; (7)Completep roduct spectrum and PSpice Models.