Product Summary

MG50Q6ES50 is a silicon N channel IGBT. The applications of the MG50Q6ES50 include high power switching and motor control.

Parametrics

MG50Q6ES50 absolute maximum ratings: (1)Collector-Emitter Voltage: 1200 V; (2)Gate-Emitter Voltage: ±20 V; (3)Collector Current: 100/90 A; (4)Forward Current: 50 A; (5)Collector Power Dissipation: 350 W; (6)Junction Temperature: 150 ℃; (7)Storage Temperature Range: -40 to 125 ℃.

Features

MG50Q6ES50 features: (1)The Electrodes are Isolated from Case; (2)High Input Impedance; (3)6 IGBTs Built Into 1 Package.

Diagrams

MG50Q6ES50 dimension