Product Summary

The MG300Q2YS43 is a silicon N channel IGBT.

Parametrics

MG300Q2YS43 absolute maximum ratings: (1)Collector-Emitter Voltage VCES: 1200 V; (2)Gate-Emitter voltage: ±20V; (3)Collector Current IC: 300A; (4)Forward CurrentDC IF: 300A; (5)Collector Power Dissipation (Tc= 25℃) PI: 1800 W ; (6)Junction Temperature TJ: 150℃; (7)Storage Temperature Range Tstg: -40 to 125 ℃.

Features

MG300Q2YS43 features: (1)High Input Impedance; (2)High Speed; (3)Low Saturation Voltage; (4)Enhancement-Mode; (5)The Electrodes are Isolated from Case; (6)Weight: 550g.

Diagrams

MG300Q2YS43 block diagram