Product Summary

MG300Q1US11 is an Insulated gate bipolar transistor. The applications of the MG300Q1US11 include High Power Switching and Motor Control.

Parametrics

MG300Q1US11 absolute maximum ratings: (1)Collector-Emitter Voltage: 1200 V; (2)Gate-Emitter Voltage: ±20 V; (3)Collector Current: 300 A; (4)Forward Current: 300 A; (5)Collector Power Dissipation (Tc=25 ℃): 2000 W; (6)Junction Temperature: 150 ℃; (7)Storage Temperature Range: -40 to 125 ℃.

Features

MG300Q1US11 features: (1)High input impedance; (2)High speed: tf = 1.0μS (Max.) trr=O.5μS (Max.); (3)Low saturation voltage: VeE (sat)=2.7V (Max.); (4)Enhancement mode; (5)The electrodes are isolated from case.

Diagrams

MG300Q1US11 dimension