Product Summary

The IKW03N120H2 is a High Speed 2-Technology with soft, fast recovery anti-parallel Emitter Controlled HE diode. It is designed for:SMPS, LampBallast and ZVS-Converter.

Parametrics

IKW03N120H2 absolute maximum ratings: (1)Collector-emitter voltage, VCE: 1200V; (2)Triangular collector current, IC: 9.6A at TC =25°C, f =140kHz; 3.9A at TC =100°C, f =140kHz; (3)Pulsed collector current, tp limitedby Tjmax, ICpuls: 9.9A; (4)Turn off safe operating area, VCE ≤ 1200V, Tj≤ 150°C: 9.9; (5)Diode forward current, IF: 9.6A at TC =25°C; 3.9A at TC =100°C; (6)Gate-emitter voltage VGE: ±20 V; (7)Power dissipation, TC =25°C, Ptot: 62.5W; (8)Operating junction and storage temperature, Tj, Tstg: -40 to +150°C; (9)Soldering temperature, 1.6mm(0.063in.) from case for 10s: -260°C.

Features

IKW03N120H2 features: (1)loss reduction in resonant circuits; (2)temperature stable behavior; (3)parallel switching capability; (4)tight parameter distribution; (5)Eoff optimized for IC =3A; (6)Qualified according to JEDEC2 for target applications; (7)Pb-free lead plating; RoHS compliant; (8)Complete product spectrum and PSpice Models .

Diagrams

IKW03N120H2 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IKW03N120H2
IKW03N120H2
Infineon Technologies
IGBT Transistors HIGH SPEED 2 TECH 1200V 3A
Data Sheet
0-1: $2.18
1-10: $1.94
10-100: $1.60
100-250: $1.44
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IKW03N120H2
IKW03N120H2
Infineon Technologies
IGBT Transistors HIGH SPEED 2 TECH 1200V 3A
Data Sheet
0-1: $2.18
1-10: $1.94
10-100: $1.60
100-250: $1.44
IKW08T120
IKW08T120
Infineon Technologies
IGBT Transistors LOW LOSS DuoPack 1200V 8A
Data Sheet
0-1: $3.26
1-10: $2.72
10-100: $2.06
100-250: $1.96