(Hong Kong)
Product Summary
The BSM15GD120DN2 is an IGBT Power Module.
Parametrics
BSM15GD120DN2 absolute maximum ratings: (1)Collector-emitter voltage, VCE: 1200 V; (2)Collector-gate voltage, VCGR: 1200V; (3)Gate-emitter voltage, VGE: ±20V; (4)DC collector current, TC = 25℃, IC: 15A; TC = 80℃, IC: 25A; (5)Pulsed collector current, tp = 1 ms, TC = 25℃, ICpuls: 30A; TC = 80℃, ICpuls: 50A; (6)Power dissipation per IGBT, TC = 25℃, Ptot: 145W; (7)Chip temperature, Tj: + 150℃; (8)Storage temperature, Tstg: -40 to + 125℃.
Features
BSM15GD120DN2 features: (1)Power module; (2)3-phase full-bridge; (3)Including fast free-wheel diodes; (4)Package with insulated metal base plate.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 BSM15GD120DN2 |
Infineon Technologies |
IGBT Modules 1200V 15A 3-PHASE |
Data Sheet |
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BSM15GD120DN2E3224 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 25A |
Data Sheet |
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