(Hong Kong)
Product Summary
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for SSB transmitter
applications in the HF frequency
range. The transistor is encapsulated
in a 4-lead, SOT123 flange envelope,
with a ceramic cap. All leads are
isolated from the flange. Matched
gate-source voltage (VGS) groups are
available on request
Features
? High power gain
? Low noise figure
? Good thermal stability
? Withstands full load mismatch
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 BLF145 |
Other |
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Data Sheet |
Negotiable |
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BLF145,112 |
NXP Semiconductors |
Transistors RF MOSFET Power RF DMOS 30W HF |
Data Sheet |
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