Product Summary

The 1MBI200N-120 is an IGBT module.

Parametrics

1MBI200N-120 absolute maximum ratings: (1)Collector-Emitter Voltage, VCES: 600 V; (2)Gate -Emitter Voltage, VGES: ± 20 V; (3)Continuous, IC: 200A; (4)Collector 1ms, IC PULSE: 400A; (5)Current Continuous, -IC: 200A; (6)1ms -IC, PULSE: 400A; (7)Max. Power Dissipation, PC: 780 W; (8)Operating Temperature, Tj: +150℃; (9)Storage Temperature, Tstg: -40 to +125℃; (10)Isolation Voltage A.C. 1min, Vis: 2500 V.

Features

1MBI200N-120 features: (1)Square RBSOA; (2)Low Saturation Voltage; (3)Overcurrent Limiting Function (~3 Times Rated Current).

Diagrams

1MBI200N-120 block diagram

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