(Hong Kong)
Product Summary
The P2N2222AG is an amplifier transistor.
Parametrics
P2N2222AG absolute maximum ratings: (1)Collector--Emitter Voltage VCEO: 40 Vdc; (2)Collector--Base Voltage VCBO: 75 Vdc; (3)Emitter--Base Voltage VEBO: 6.0 Vdc; (4)Collector Current -- Continuous IC: 600 mAdc; (5)Total Device Dissipation @ TA = 25°C PD: 625 mW/°C; (6)Total Device Dissipation @ TC = 25°C PD: 12 mW/°C; (7)Operating and Storage Junction Temperature Range TJ , Tstg: -5 5 t o +150°C.
Features
P2N2222AG feature: these are Pb--Free Devices.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 P2N2222AG |
ON Semiconductor |
Transistors Bipolar (BJT) 600mA 75V NPN |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
|
P2N2222AG |
ON Semiconductor |
Transistors Bipolar (BJT) 600mA 75V NPN |
Data Sheet |
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P2N2222ARL1 |
ON Semiconductor |
Transistors Bipolar (BJT) 600mA 75V NPN |
Data Sheet |
Negotiable |
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P2N2907ARL1 |
ON Semiconductor |
Transistors Bipolar (BJT) 600mA 60V PNP |
Data Sheet |
Negotiable |
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P2N2907AZL1G |
ON Semiconductor |
Transistors Bipolar (BJT) 600mA 60V PNP |
Data Sheet |
Negotiable |
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P2N2907AZL1 |
ON Semiconductor |
Transistors Bipolar (BJT) 600mA 60V PNP |
Data Sheet |
Negotiable |
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|
P2N2907ARL1G |
ON Semiconductor |
Transistors Bipolar (BJT) 600mA 60V PNP |
Data Sheet |
Negotiable |
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