(Hong Kong)
Product Summary
The NTR4003NT1G is a Power MOSFET. Applications are (1)Notebooks: Level Shifters, Logic Switches, Low Side Load Switches; (2)Portable Applications.
Parametrics
NTR4003NT1G absolute maximum ratings: (1)Drain-to-Source Voltage VDSS: 30 V; (2)Gate-to-Source Voltage VGS: 20 V; (3)Continuous Drain TA = 25°C ID: 0.5 A; (4)Power Dissipation (Note 1)Steady State PD: 0.69 W; (5)Continuous Drain Current (Note 1)t < 10 s TA = 25°C ID: 0.56 A; (6)Power Dissipation t < 5 s PD: 0.83 W; (7)Pulsed Drain Current tp = 10 μs IDM: 1.7 A; (8)Operating Junction and Storage Temperature TJ, Tstg: -55 to 150 °C; (9)Source Current (Body Diode)IS: 1.0 A; (10)Lead Temperature for Soldering Purposes (1/8” from case for 10 s)TL: 260 °C.
Features
NTR4003NT1G features: (1)low gate voltage threshold (VGS(TH))to facilitate drive circuit design; (2)low gate charge for fast switching; (3)ESD protected gate; (4)SOT-23 package provides excellent thermal performance; (5)minimum breakdown voltage rating of 30 V; (6)these are Pb-free devices.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 NTR4003NT1G |
ON Semiconductor |
MOSFET NFET 30V .56A 1500M |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
|
NTR4003NT1G |
ON Semiconductor |
MOSFET NFET 30V .56A 1500M |
Data Sheet |
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NTR4101PT1 |
ON Semiconductor |
MOSFET -20V -3.2A P-Channel |
Data Sheet |
Negotiable |
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NTR4101PT1G |
ON Semiconductor |
MOSFET -20V -3.2A P-Channel |
Data Sheet |
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NTR4170NT1G |
ON Semiconductor |
MOSFET NFET SOT23 30V 4A TR |
Data Sheet |
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NTR4170NT3G |
ON Semiconductor |
MOSFET NFET SOT23 30V 4A |
Data Sheet |
Negotiable |
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NTR4171PT1G |
ON Semiconductor |
MOSFET PFET SOT23 30V TR 0.075R |
Data Sheet |
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