(Hong Kong)
Product Summary
The MJE13003 is a switchmode series NPN silicon power transistor. The MJE13003 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. The MJE13003 is particularly suited for 115 and 220 V switchmode applications such as switching regulator, inverter, motor control, solenoid/relay driver and deflection circuit.
Parametrics
MJE13003 absolute maximum ratings: (1)Collector–emitter sustaining voltage VCEO: 400 Vdc; (2)Collector–emitter breakdown voltage VCES: 700 Vdc; (3)Emitter–base voltage VEBO: 9.0 Vdc; (4)Collector current — continuous: 1.5 Adc; (5)Collector current — peak (Note 1): 3 Adc; (6)Base current — continuous: 0.75 Adc; (7)Base current — peak (Note 1): 1.5 Adc; (8)Emitter current — continuous: 2.25 Adc; (9)Emitter current — peak (Note 1): 4.5 Adc; (10)Total power dissipation @ TC = 25°C: 1.4 W; Derate above 25°C: 11.2 W/°C; (11)Total power dissipation @ TC = 25°C: 40 W; Derate above 25°C: 320 W/°C; (12)Operating and storage temperature TJ, Tstg: – 65 to 150 °C.
Features
MJE13003 features: (1)Pb−free package is available; (2)Reverse bias SOA with inductive loads @ TC = 100°C; (3)700 V blocking capability; (4)SOA and switching applications information; (5)Inductive switching matrix 0.5 to 1.5 A, 25 and 100℃ tc @ 1 A, 100℃ is 290 ns (Typ).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 MJE13003 |
ON Semiconductor |
Transistors Bipolar (BJT) BIP NPN 2A 400V |
Data Sheet |
Negotiable |
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MJE13003D |
Other |
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Data Sheet |
Negotiable |
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MJE13003G |
ON Semiconductor |
Transistors Bipolar (BJT) BIP NPN 2A 400V |
Data Sheet |
Negotiable |
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