IRF9Z24NPBF

IRF9Z24NPBF, HEXFET power MOSFET, 12 A, 20 V, 45 W, DIP

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Price:: US $0.30~0.50 / piece [Get Latest Price]

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1001 ~ 10000 :	0.40 / Piece
10001 ~ 100000 :	0.30 / Piece

PartNumber:: IRF9Z24NPBF

Brand:: International Rectifier - IR | D/C: 13+

Availability:: Supply Ability: 10000/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2013-07-24

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Part Number:IRF9Z24NPBF
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IRF9Z24NPBF

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Product Summary

The IRF9Z24NPBF is a HEXFET power MOSFET. The IRF9Z24NPBF utilizes advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRF9Z24NPBF is well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Parametrics

IRF9Z24NPBF absolute maximum rarings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: -12 A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: -8.5 A; (3)IDM Pulsed Drain Current: -48 A; (4)PD @TC = 25℃ Power Dissipation: 45 W; (5)Linear Derating Factor: 0.30 W/℃; (6)VGS Gate-to-Source Voltage: ±20 V; (7)EAS Single Pulse Avalanche Energy: 96 mJ; (8)IAR Avalanche Current: -7.2 A; (9)EAR Repetitive Avalanche Energy: 4.5 mJ; (10)dv/dt Peak Diode Recovery dv/dt: -5.0 V/ns; (11)TJ TSTG Operating Junction and Storage Temperature Range: -55 to + 175℃; (12)Soldering Temperature, for 10 seconds: 300 (1.6mm from case )℃; (13)Mounting torque, 6-32 or M3 screw: 10 lbf·in(1.1 N·m).

Features

IRF9Z24NPBF features: (1)Advanced Process Technology; (2)Surface Mount; (3)175℃ Operating Temperature; (4)Fast Switching; (5)P-Channel; (6)Fully Avalanche Rated; (7)Lead-free.