Product Summary

The FLL357ME is a Power GaAs FET that is specifically designed to
provide high power at L-Band frequencies with gain, linearity and
efficiency superior to that of silicon devices. The performance in
multitone environments for Class AB operation make them ideally suited
for base station applications. This device is assembled in hermetic
metal/ceramic package.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.


? High Output Power: P1dB
=35.5dBm (Typ.)
? High Gain: G1dB
=11.5dB (Typ.)
? High PAE: η
=46% (Typ.)
? Proven Reliability
? Hermetically Sealed Package