(Hong Kong)
Product Summary
The AO9926B is a dual n-channel enhancement mode field effect transistor. The AO9926B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The AO9926B offers operation over a wide gate drive range from 1.8V to 8V. The two devices may be used individually, in parallel or to form a bidirectional blocking switch.
Parametrics
AO9926B absolute maximum ratings: (1)Drain-Source Voltage: 20 V; (2)Gate-Source Voltage: 12 V; (3)Pulsed Drain Current B: 30A; (4)Power Dissipation TA=25°C PD: 2W; (5)Junction and Storage Temperature Range: -55 to 150 °C.
Features
AO9926B features: (1)VDS (V)= 20V; (2)ID =7.6 A; (3)RDS(ON)< 23mΩ (VGS = 10V); (4)RDS(ON)< 34mΩ (VGS = 2.5V); (5)RDS(ON)< 52mΩ (VGS = 1.8V).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 AO9926B |
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MOSFET DUAL N-CH 20V 7.6A 8-SOIC |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||
 |
AO9926 |
Other |
|
Data Sheet |
Negotiable |
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AO9926A |
Other |
|
Data Sheet |
Negotiable |
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AO9926B |
|
MOSFET DUAL N-CH 20V 7.6A 8-SOIC |
Data Sheet |
Negotiable |
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AO9926C |
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MOSFET 2N-CH 20V 7.6A 8SOIC |
Data Sheet |
|
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AO9926E |
Other |
|
Data Sheet |
Negotiable |
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