(Hong Kong)
Product Summary
The AO8822 is a Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor. The AO8822 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. Standard Product AO8822 is Pb-free (meets ROHS & Sony 259 specifications). The AO8822 is electrically identical.
Parametrics
AO8822 absolute maximum ratings: (1)Gate-Source Voltage, VDS: 20V; (2)Drain-Source Voltage, VGS: ±12V; (3)Continuous Drain Current, ID: 7A at TA=25°C; ID: 5.7A at TA=70°C; (4)Pulsed Drain Current, IDM: 30A; (5)Power Dissipation, PD: 1.5W at TA=25°C; 0.96W at TA=70°C; (6)Junction and Storage Temperature Range, Tj, Tstg: -55 to 150°C.
Features
AO8822 features: (1)VDS (V) = 20V; (2)ID = 7 A (VGS = 10V); (3)RDS(ON) < 21mΩ (VGS = 10V); (4)RDS(ON) < 24mΩ (VGS = 4.5V); (5)RDS(ON) < 32mΩ (VGS = 2.5V); (6)RDS(ON) < 50mΩ (VGS = 1.8V).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 AO8822 |
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MOSFET DUAL N-CH 20V 7A 8-TSSOP |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||
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AO8800 |
Other |
|
Data Sheet |
Negotiable |
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AO8801 |
Other |
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Data Sheet |
Negotiable |
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AO8802 |
Other |
|
Data Sheet |
Negotiable |
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AO8803 |
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MOSFET DUAL P-CH -12V -7A 8TSSOP |
Data Sheet |
Negotiable |
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AO8804 |
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MOSFET 2N-CH 20V 8A 8TSSOP |
Data Sheet |
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AO8806 |
Other |
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Data Sheet |
Negotiable |
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