Product Summary

The AO4932 is an asymmetric dual N-channel enhancement mode field effect transistor. The AO4932 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. The AO4932 in parallel with the synchronous MOSFET to boost efficiency further. Standard Product AO4932 is Pb-free.

Parametrics

AO4932 absolute maximum ratings: (1)Drain-source voltage: 30 V; (2)Gate-source voltage: ±12 V(FET1), ±20 V(FET2); (3)Continuous drain current TA=25°C: 9.0 A; TA=70°C: 7.2 A; (4)Pulsed drain current: 40 A; (5)Power dissipation TA=25°C: 2 W; TA=70°C: 1.3 W; (6)Junction and storage temperature range: -55 to 150 °C; (7)Avalanche current: 16 A; (8)Repetitive avalanche energy L=0.3mH: 38 mJ.

Features

AO4932 features: (1)FET1: VDS (V)= 30V; ID = 9A; RDS(ON)< 15.8mΩ (VGS = 10V); RDS(ON)< 19.6mΩ (VGS = 4.5V); (2)FET2: VDS(V)= 30V; ID = 9A; <15.8mΩ (VGS = 10V); <23mΩ (VGS = 4.5V).

Diagrams

AO4932 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
AO4932
AO4932

MOSFET DUAL N-CH 30V 9A ASYM SO8
Data Sheet
0-1: $0.58
1-25: $0.45
25-100: $0.40
100-250: $0.34
250-500: $0.29
500-1000: $0.23
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