Product Summary

The AO4803 is a P-Channel Enhancement Mode Field Effect Transistor. The AO4803 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. The device of the AO4803 is suitable for use as a load switch or in PWM applications. Standard Product AO4803 is Pb-free (meets ROHS & Sony 259 specifications). The AO4803 is a Green Product ordering option.

Parametrics

AO4803 absolute maximum ratings: (1)Drain-Source Voltage, VDS: -30 V; (2)Gate-Source Voltage, VGS: ±20 V; (3)Continuous Drain Current, ID: -5 A; (4)Pulsed Drain Current, IDM: -20 A; (5)Power Dissipation, PD: 2W; (6)Junction and Storage Temperature Range, TJ: -55 to 150 ℃.

Features

AO4803 features: (1)VDS (V) = -30V; (2)ID = -5 A (VGS =-10V); (3)RDS(ON) < 52mΩ (VGS = -10V); (4)RDS(ON) < 87mΩ(VGS =-4.5V).

Diagrams

AO4803 block diagram 

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AO4803
AO4803

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Data Sheet

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AO4803A
AO4803A


MOSFET DUAL P-CH -30V -5A 8-SOIC

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