Product Summary

The AO4712 is an N-Channel Enhancement Mode Field Effect Transistor. The AO4712 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON), and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.

Parametrics

AO4712 absolute maximum ratings: (1)Drain-Source Voltage, VDS: 30V; (2)Drain-Source Voltage, VGS: ±12V; (3)Continuous Drain Current, TA=25℃, IDSM: 11.2A; TA=70℃, IDSM: 9.1A; (4)Pulsed Drain Current, IDM: 60A; (5)Avalanche Current, IAR: 16A; (6)Repetitive avalanche energy L=0.3mH, EAR: 38mJ; (7)Power Dissipation, TA=25℃, PDSM: 3.1W; TA=70℃, PDSM: 2.0W; (8)Junction and Storage Temperature Range, TJ, TSTG: -55 to 150℃.

Features

AO4712 features: (1)VDS (V) = 30V; (2)ID =11.2A (VGS = 10V); (3)RDS(ON) < 14.5mΩ (VGS = 10V); (4)RDS(ON) < 18mΩ (VGS = 4.5V).

Diagrams

AO4712 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
AO4712
AO4712

MOSFET N-CH 30V 11.2A 8-SOIC
Data Sheet
Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
AO4712
AO4712

MOSFET N-CH 30V 11.2A 8-SOIC
Data Sheet
Negotiable 
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Data Sheet
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Data Sheet
0-1: $0.47
1-25: $0.37
25-100: $0.32
100-250: $0.28
250-500: $0.24
500-1000: $0.19
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Data Sheet
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Data Sheet
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Data Sheet
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