(Hong Kong)
Product Summary
The AO4712 is an N-Channel Enhancement Mode Field Effect Transistor. The AO4712 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON), and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.
Parametrics
AO4712 absolute maximum ratings: (1)Drain-Source Voltage, VDS: 30V; (2)Drain-Source Voltage, VGS: ±12V; (3)Continuous Drain Current, TA=25℃, IDSM: 11.2A; TA=70℃, IDSM: 9.1A; (4)Pulsed Drain Current, IDM: 60A; (5)Avalanche Current, IAR: 16A; (6)Repetitive avalanche energy L=0.3mH, EAR: 38mJ; (7)Power Dissipation, TA=25℃, PDSM: 3.1W; TA=70℃, PDSM: 2.0W; (8)Junction and Storage Temperature Range, TJ, TSTG: -55 to 150℃.
Features
AO4712 features: (1)VDS (V) = 30V; (2)ID =11.2A (VGS = 10V); (3)RDS(ON) < 14.5mΩ (VGS = 10V); (4)RDS(ON) < 18mΩ (VGS = 4.5V).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 AO4712 |
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MOSFET N-CH 30V 11.2A 8-SOIC |
Data Sheet |
Negotiable |
|
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
|
AO4701 |
|
MOSFET P-CH -30V -5A 8-SOIC |
Data Sheet |
Negotiable |
|
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 |
AO4702 |
Other |
|
Data Sheet |
Negotiable |
|
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|
AO4704 |
Other |
|
Data Sheet |
Negotiable |
|
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|
AO4706 |
|
MOSFET N-CH 30V 16.5A 8-SOIC |
Data Sheet |
Negotiable |
|
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|
AO4708 |
|
MOSFET N-CH 30V 15A 8-SOIC |
Data Sheet |
Negotiable |
|
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|
AO4710 |
|
MOSFET N-CH 30V 12.7A 8-SOIC |
Data Sheet |
Negotiable |
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