(Hong Kong)
Product Summary
The AO4702 is an N-channel enhancement mode field effect transistor with schottky diode. The AO4702 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The AO4702 is packaged in parallel to improve device performance in synchronous recitification applications, or H-bridge configurations. Standard Product AO4702 is Pb-free.
Parametrics
AO4702 absolute maximum ratings: (1)Drain-source voltage: 30 V; (2)Gate-source voltage: ±20 V; (3)Continuous drain current TA=25°C: 11 A; TA=70°C: 9.3 A; (4)Pulsed drain current: 50 A; (5)Power dissipation TA=25°C: 3 W; TA=70°C: 2 W; (6)Junction and storage temperature range: -55 to 150 °C; (7)Continuous forward current TA=25°C: 4.4 A; TA=70°C: 3.2 A; (8)Pulsed diode forward current: 30 A.
Features
AO4702 features: (1)VDS (V)= 30V; (2)ID = 11A (VGS = 10V); (3)RDS(ON)< 16mΩ (VGS = 10V); (4)RDS(ON)< 25mΩ (VGS = 4.5V).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 AO4702 |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
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AO4701 |
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MOSFET P-CH -30V -5A 8-SOIC |
Data Sheet |
Negotiable |
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AO4702 |
Other |
|
Data Sheet |
Negotiable |
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AO4704 |
Other |
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Data Sheet |
Negotiable |
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AO4706 |
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Data Sheet |
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AO4708 |
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Data Sheet |
Negotiable |
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AO4710 |
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Data Sheet |
Negotiable |
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