Product Summary

The AO4702 is an N-channel enhancement mode field effect transistor with schottky diode. The AO4702 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The AO4702 is packaged in parallel to improve device performance in synchronous recitification applications, or H-bridge configurations. Standard Product AO4702 is Pb-free.

Parametrics

AO4702 absolute maximum ratings: (1)Drain-source voltage: 30 V; (2)Gate-source voltage: ±20 V; (3)Continuous drain current TA=25°C: 11 A; TA=70°C: 9.3 A; (4)Pulsed drain current: 50 A; (5)Power dissipation TA=25°C: 3 W; TA=70°C: 2 W; (6)Junction and storage temperature range: -55 to 150 °C; (7)Continuous forward current TA=25°C: 4.4 A; TA=70°C: 3.2 A; (8)Pulsed diode forward current: 30 A.

Features

AO4702 features: (1)VDS (V)= 30V; (2)ID = 11A (VGS = 10V); (3)RDS(ON)< 16mΩ (VGS = 10V); (4)RDS(ON)< 25mΩ (VGS = 4.5V).

Diagrams

AO4702 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
AO4702
AO4702
Other

Data Sheet
Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
AO4702
AO4702
Other

Data Sheet
Negotiable 
AO4712
AO4712

MOSFET N-CH 30V 11.2A 8-SOIC
Data Sheet
Negotiable 
AO4714
AO4714

MOSFET N-CH 30V 20A 8-SOIC
Data Sheet
Negotiable 
AO4718
AO4718

MOSFET N CH 30V 15V SOIC 8
Data Sheet
0-1: $0.47
1-25: $0.37
25-100: $0.32
100-250: $0.28
250-500: $0.24
500-1000: $0.19
AO4724
AO4724

MOSFET 30V 7.7A SOIC 8
Data Sheet
0-1: $0.38
1-25: $0.27
25-100: $0.23
100-250: $0.20
250-500: $0.17
500-1000: $0.13
AO4728L
AO4728L
Other

Data Sheet
Negotiable