Product Summary

The AO4470 is an N-channel enhancement mode field effect transistor. The AO4470 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. The AO4470 is ideally suited for use as a low side switch in notebook CPU core power conversion. Standard product AO4470 is Pb-free.

Parametrics

AO4470 absolute maximum ratings: (1)Drain-source voltage: 30 V; (2)Gate-source voltage: ±12 V; (3)Continuous drain current TA=25°C: 18 A; TA=70°C: 15 A; (4)Pulsed drain current: 80 A; (5)Power dissipation TA=25°C: 3 W; TA=70°C: 2.1 W; (6)Junction and storage temperature range: -55 to 150 °C.

Features

AO4470 features: (1)VDS (V)= 30V; (2)ID = 18 A (VGS = 10V); (3)RDS(ON)< 5.5mΩ (VGS = 10V); (4)RDS(ON)< 6.2mΩ (VGS = 4.5V).

Diagrams

AO4470 pin connection