Product Summary

The AO4430 is an N-channel enhancement mode field effect transistor. The AO4430 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. The AO4430 is ideally suited for use as a low side switch in Notebook CPU core power conversion.

Parametrics

AO4430 absolute maximum ratings: (1)Drain-source voltage: 30 V; (2)Gate-source voltage: ±20 V; (3)Continuous drain current TA=25°C: 18 A; TA=70°C: 15 A; (4)Pulsed drain current: 80 A; (5)Power dissipation TA=25°C: 3 W; TA=70°C: 2.1 W; (6)Junction and storage temperature range: -55 to 150 °C; (7)Avalanche current: 30 A; (8)Repetitive avalanche energy 0.3mH: 135 mJ.

Features

AO4430 features: (1)VDS (V)= 30V; (2)ID = 18A (VGS = 10V); (3)RDS(ON)< 5.5mΩ (VGS = 10V); (4)RDS(ON)< 7.5mΩ (VGS = 4.5V).

Diagrams

AO4430 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
AO4430
AO4430

MOSFET N-CH 30V 18A 8-SOIC
Data Sheet
0-1: $0.64
1-25: $0.49
25-100: $0.43
100-250: $0.37
250-500: $0.32
500-1000: $0.25
AO4430L
AO4430L
Other

Data Sheet
Negotiable