Product Summary
The AO4407A is a P-channel enhancement mode field effect transistor. The AO4409 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. The AO4409 is suitable for use as a load switch or in PWM applications.
Parametrics
AO4409 absolute maximum ratings: (1)Drain-source voltage: -30 V; (2)Gate-source voltage: ±20 V; (3)Continuous drain current TA=25°C: -15 A; TA=70°C: -12.8 A; (4)Pulsed drain current: -80 A; (5)Power dissipation TA=25°C: 3 W; TA=70°C: 2.1 W; (6)Junction and storage temperature range: -55 to 150 °C.
Features
AO4409 features: (1)VDS = -30V; (2)ID = -15A (VGS = -10V); (3)Max RDS(ON) < 7.5mΩ (VGS = -10V); (4)Max RDS(ON) < 12mΩ (VGS = -4.5V).
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||||
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AO4409 |
MOSFET P-CH -30V -15A 8-SOIC |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||||
AO4401 |
Other |
Data Sheet |
Negotiable |
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AO4402 |
MOSFET N-CH 20V 20A 8SOIC |
Data Sheet |
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AO4403 |
MOSFET P-CH -30V -6.1A 8-SOIC |
Data Sheet |
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AO4404 |
Other |
Data Sheet |
Negotiable |
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AO4404B |
MOSFET N-CH 30V 8.5A 8-SOIC |
Data Sheet |
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AO4405 |
Other |
Data Sheet |
Negotiable |
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