Product Summary
The AO3423 is a P-Channel Enhancement Mode Field Effect Transistor. It uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO3423 is Pb-free (meets ROHS & Sony 259 specifications).
Parametrics
AO3423 absolute maximum ratings: (1)Power Dissipation: 1.4W or 0.9W; (2)Junction and Storage Temperature Range: -55 to 150℃; (3)Gate-Source Voltage: ±12V; (4)Drain-Source Voltage: -20V; (5)Pulsed Drain Current: -8A; (6)Continuous Drain Current: -2A.
Features
AO3423 features: (1)VDS (V)= -20V; (2)ID = -2 A (VGS = -10V); (3)RDS(ON)< 92mΩ (VGS = -10V); (4)RDS(ON)< 118mΩ (VGS = -4.5V); (5)RDS(ON)< 166mΩ (VGS = -2.5V); (6)ESD Rating: 2000V HBM.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||||
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AO3423 |
MOSFET P-CH -20V -2A SOT23 |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||||
AO3400 |
Other |
Data Sheet |
Negotiable |
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AO3400A |
MOSFET N-CH 30V 5.7A SOT23 |
Data Sheet |
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AO3401 |
Other |
Data Sheet |
Negotiable |
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AO3401A |
MOSFET P-CH -30V -4.3A SOT23 |
Data Sheet |
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AO3402 |
MOSFET N-CH 30V 4.0A SOT23 |
Data Sheet |
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AO3402L |
Other |
Data Sheet |
Negotiable |
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