Product Summary

The MG75J2YS1 is a Silicon N Channel IGBT. The applications of the MG75J2YS1 include High Power Switching and Motor Control.

Parametrics

MG75J2YS1 absolute maximum ratings: (1)Collector-emitter voltage: 600 V; (2)Gate-emitter voltage: ±20 V; (3)Collector current: 75 A; (4)Forward current: 75 A; (5)Collector power dissipation: 390 W; (6)Junction temperature: 150 ℃; (7)Storage temperature range: -40 to 125 ℃.

Features

MG75J2YS1 features: (1)The electrodes are isolated from case; (2)High input impedance; (3)Includes a complete half bridge in one package; (4)Enhancement-mode.

Diagrams

MG75J2YS1 dimension