(Hong Kong)
Product Summary
The MG400Q1US61 is a TOSHIBA GTR module which is a silicon N channel IGBT. The applications of the MG400Q1US61 include high power switching applications, motor control applications.
Parametrics
MG400Q1US61 absolute maximum ratings: (1)Collector-emitter voltage: 1200 V; (2)Gate-emitter voltage: ±20 V; (3)Collector current: 520/400 A; (4)Forward current: 400 A; (5)Collector power dissipation (Tc = 25℃): 3000 W; (6)Junction temperature: 150 ℃; (7)Storage temperature range: -40~125 ℃; (8)Isolation voltage: 2400 (AC 1min) V; (9)Screw torque: 2/3/3 N·m.
Features
MG400Q1US61 features: (1)High input impedance; (2)High speed: tf=0.3μs (max)@inductive load; (3)low saturation voltage: VCE(sat)=3.6 V(max); (4)Enhancement Mode; (5)Electrodes are isolated from case.
Diagrams
