(Hong Kong)
Product Summary
The MG400Q1US41 is an N channel IGBT.
Parametrics
MG400Q1US41 absolute maximum ratings: (1)Collector-emitter voltage: 1200 V; (2)Gate-emitter voltage: ±20 V; (3)Collector current: 400 A; (4)Forward current: 400 A; (5)Collector power dissipation (Tc = 25℃): 2400 W; (6)Junction temperature: 150 ℃; (7)Storage temperature range: -40~125 ℃; (8)Isolation voltage: 2400 (AC 1min) V; (9)Screw torque: 2/3/3 N·m.
Features
MG400Q1US41 features: (1)High input impedance; (2)high speed: tf=0.3μs (max)@inductive load; (3)low saturation voltage: VCE(sat)=3.6 V(max); (4)Enhancement mode; (5)Electrodes are isolated from case.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 MG400Q1US41 |
Other |
|
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
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MG400J2YS60A |
Other |
|
Data Sheet |
Negotiable |
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MG400J2YS61A |
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IGBT MOD CMPCT DUAL 600V 400A |
Data Sheet |
Negotiable |
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MG400Q1US41 |
Other |
|
Data Sheet |
Negotiable |
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|
MG400Q1US65H |
Other |
|
Data Sheet |
Negotiable |
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MG400Q2YS60A |
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IGBT MOD CMPCT DUAL 1200V 400A |
Data Sheet |
Negotiable |
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|
MG400V1US51A |
Other |
|
Data Sheet |
Negotiable |
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