Product Summary

The MG200Q2YS9 is a silicon N channel IGBT. It is suitable for High Power Switching Applications and Motor Control Applications.

Parametrics

MG200Q2YS9 absolute maximum ratings: (1)Collector-emitter voltage, VCES: 1200 V; (2)Gate-emitter voltage, VGES: ±20 V; (3)Collector current, DC, IC (25℃/80℃): 300/200A; 1ms, IC (25℃/80℃): 600/400A; (4)Forward current, DC, IF: 200A; 1ms, IFM: 400A; (5)Collector power dissipation (Tc = 25℃), PC: 1400W; (6)Junction temperature, Tj: 150℃; (7)Storage temperature range, Tstg: -40 to 125℃; (8)Isolation voltage, VIsol: 2500V (AC 1 min.); (9)Screw torque (Terminal / mounting): 3/3 Nm.

Features

MG200Q2YS9 features: (1)High input impedance; (2)High speed: tf = 0.3μs (Max.) @Inductive Load; (3)Low saturation voltage: VCE (sat) = 3.6V (Max.); (4)Enhancement-mode; (5)Includes a complate half bridge in one package; (6)The electrodes are isolated from case.

Diagrams

MG200Q2YS9 block diagram