(Hong Kong)
Product Summary
The MG200Q1US51 is a silicon N channel IGBT. The applications of the MG200Q1US51 include high power switching applications and motor control applications.
Parametrics
MG200Q1US51 absolute maximum ratings: (1)Collector-emitter voltage, VCES: 1200V; (2)gate-emitter voltage, VGES: ±20V; (3)Collector current, DC, IC: 300/200A when 25℃/80℃; 1ms, ICP: 600/400A when 25℃/80℃; (4)Forward current, DC, IF: 200A; 1ms, IFM: 400A; (5)collector power dissipation, PC: 1500W; (6)Junction temperature, Tj: 150℃; (7)Storage temperature range, Tstg: -40 to 125℃; (8)Isolation voltage, Visol: 2500V (AC 1minute); (9)Screw torque: 2Nm.
Features
MG200Q1US51 features: (1)High input impedance; (2)High speed: tf=0.3μs max @ inductive load; (3)Low saturation voltage: VCE(sat)=3.6V max; (4)Enhancement-mode; (5)The electrodes are isolated from case.
Diagrams
