(Hong Kong)
Product Summary
The MG1200V1US51 is a TOSHIBA GTR module, which is a silicon N.channel IGBT. The applications of the MG1200V1US51 include high power switching applications, motor control applications.
Parametrics
MG1200V1US51 absolute maximum ratings: (1)Collector emitter voltage: 1700 V; (2)Gate emitter voltage: 20 V; (3)Collector current: 2400 A; (4)Forward current: 2400 A; (5)Collector power dissipation (Tc = 25℃): 5560 W; (6)Junction temperature: -20~125 ℃; (7)Storage temperature range: -40~125 ℃; (8)Isolation voltage: 5400 (AC 1min) V; (9)Screw torque: 4 N·m.
Features
MG1200V1US51 features: (1)High input impedance; (2)Enhancement mode; (3)Electrodes are isolated from case.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
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 MG1200V1US51 |
Other |
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Data Sheet |
Negotiable |
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Data Sheet |
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MG1200V1US51 |
Other |
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Data Sheet |
Negotiable |
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