Product Summary

The MG100Q2YS65H is a silicon N channel IGBT. Applications are (1)High power; (2)High speed switching.

Parametrics

MG100Q2YS65H absolute maximum ratings: (1)Collector-emitter vltage, VCES: 1200V; (2)Gate-emitter voltage, VGES: ±20V; (3)Collector current, DC, IC: 100A; 1ms, ICP: 200A; (4)Forward current, DC, IF: 100A; 1ms, IFM: 200A; (5)Collector power dssipation (Tc=25℃), PC: 690W; (6)Junction temperature, Tj: 150℃; (7)Storage temeprature range, Tstg: -40 to 125℃; (8)Isolation voltage, Visol: 2500V; (9)Screw torque (terminal/mounting): 3/3 Nm.

Features

MG100Q2YS65H features: (1)High input impedance; (2)Enhancement-mode; (3)The electrodes are isolated from case.

Diagrams

MG100Q2YS65H pin connection