Product Summary

The MBM300GS12 is a Silicon N-channel IGBT.

Parametrics

MBM300GS12 absolute maximum ratings: (1)Collector Emitter Voltage, VCES: 600V; (2)Gate Emitter Voltage, VGES: ±20V; (3)Collector Current, DC, IC: 300A; 1ms, ICp: 600A; (4)Forward Current, DC, IF: 300A; 1ms, IFM: 600A; (5)Collector Power Dissipation, Pc: 800W; (6)Junction Temperature, Tj: -40 ~ +150℃; (7)Storage Temperature, Tstg: -40 ~ +125℃; (8)Isolation Voltage, VISO: 2,500(AC 1 minute) VRMS; (9)Screw Torque,Terminals: 1.96(20) N.m (kgf·cm); Mounting: 1.96(20) N.m (kgf·cm).

Features

MBM300GS12 features: (1)High speed and low saturation voltage; (2)low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD); (3)Isolated head sink (terminal to base).

Diagrams

MBM300GS12 block diagram