Product Summary

The FZ1200R16KF6 is an IGBT module.

Parametrics

FZ1200R16KF6 absolute maximum ratings: (1)collector-emitter voltage, VCES: 1600V; (2)DC-collector current, IC: 1200A; (3)repetitive peak collector current, ICRM: 2400A when tp=1ms; (4)gate-emitter peak voltage, VGE: ±20V; (5)DC forward current, IF: 1200A; (6)repetitive peak frow current, IFRM: 2400A when tp=1ms.

Features

FZ1200R16KF6 features: (1)thermal resistance, junction to case Transistor / transistor, DC RthJC: 0,016 ℃/W; Diode /diode, DC: 0,04 ℃/W; (2)thermal resistance, case to heatsink pro Module / per Module RthCK: 0,008 ℃/W; (3)max. junction temperature, tvj max: 150 ℃; (4)operating temperature, tc op: -40 to+125 ℃; (5)Lagertemperatur storage temperature tstg -40 to+125 ℃.

Diagrams

FZ1200R16KF6 pin connection