(Hong Kong)
Product Summary
The FP10R12YT3 is an IGBT module.
Parametrics
FP10R12YT3 absolute maximum ratings: (1)collector-emitter voltage, VCES: 1200V; (2)DC-collector current, IC: 10A; (3)repetitive peak collector current, ICRM: 20A; (4)total power dissipation, Ptot: 78W; (5)gate-emitter peak voltage, VGES: ±20V.
Features
FP10R12YT3 features: (1)repetitive peak reverse voltage, VRRM: 1200V; (2)DC forward current, IF: 10A; (3)repetitive peak forward curretn, IFRM: 20A; (4)I2t-value, I2t: 20 A2s.
Diagrams
| Image | Part No | Mfg | Description |  |
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 FP10R12YT3 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 16A |
Data Sheet |
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FP10R12YT3_B4 |
Infineon Technologies |
IGBT Modules IGBT 1200V 10A |
Data Sheet |
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